Effective Control of Auger Recombination in Silicon Solar Cell

Abstract

Silicon Solar cells efficiency is hindered by Auger recombination wherein the eXCiton recombination energy is transferred to a third charge carrier. Consequently the lifetime of the circulating carriers and fill factor of the device are severely limited. This research explores the oscillatory theoretical dependence of the rate of Auger ionization on the shape of the Nano-crystals and the value of the potential well surrounding it, to control the Auger recombination by modifying the Nano-crystal surface and size. Numerical modelling and simulation are used to analyze recombination losses with due consideration to the generated carrier concentration, carrier transport and conservation. Optical and carrier recombination losses in All Back Surface Field and All Local Back Surface Field silicon wafer cells were investigated using various Auger parameterizations namely Altermatt, Kerr and Richter, with each implemented in Sentaurus TCAD. The overal| efficiency of the Silicon wafer Solar Cell improved from 18.7% to 20.25% at 315K. This signifies an enhancement in the efficiency of the device by 8.3% of its initial value.